中国科学院重庆绿色智能技术研究院机构知识库

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限定条件	作者：赵洪泉    第一作者    作者：石轩

已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择期刊影响因子升序期刊影响因子降序作者升序作者降序题名升序题名降序WOS被引频次升序WOS被引频次降序发表日期升序发表日期降序提交时间升序提交时间降序
	High photoresponse detectors based on Yb-doped monolayer WS2 nanosheets 期刊论文 APPLIED SURFACE SCIENCE, 2024, 卷号: 652, 页码: 10 作者:  Liu, Shaoxiang;  Zhao, Yang;  Cao, Sheng;  Chen, Sikai;  Wang, Chunxiang;  Shi, Xuan;  Zhao, Hongquan 收藏  |  浏览/下载：189/0  |  提交时间：2024/04/07 TMDCs  Yb-doped monolayer WS 2 nanosheets  CVD  DFT calculations  Photodetectors
	Tunable electronic and optical properties of WSe2/Si2H heterojunction via electric field 期刊论文 PHYSICA SCRIPTA, 2024, 卷号: 99, 期号: 2, 页码: 12 作者:  Liang, Xianxiao;  Zhao, Hongquan;  Zhao, Yang;  Deng, Xueyi;  Xiao, Zeyun;  Peng, Xiaoyu;  Yuan, Hongkuan;  Shi, Xuan 收藏  |  浏览/下载：180/0  |  提交时间：2024/03/01 WSe2/Si2H heterojunction  first principles  extra electric field  optical absorption coefficient
	Tunable electronic and optical properties of WSe2/Si2H heterojunction via electric field 期刊论文 Physica Scripta, 2024, 卷号: 99, 期号: 2 作者:  Liang,Xianxiao;  Zhao,Hongquan;  Zhao,Yang;  Deng,Xueyi;  Xiao,Zeyun;  Peng,Xiaoyu;  Yuan,Hongkuan;  Shi,Xuan 收藏  |  浏览/下载：10/0  |  提交时间：2024/02/23 WSe2/Si2H heterojunction  first principles  extra electric field  optical absorption coefficient
	Preparation of Mixed Few-Layer GeSe Nanosheets with High Efficiency by the Thermal Sublimation Method 期刊论文 ACS APPLIED MATERIALS & INTERFACES, 2023, 页码: 8 作者:  Wang, Chunxiang;  Shi, Xuan;  Liu, Shaoxiang;  Zhao, Hongquan;  Zhang, Wei 收藏  |  浏览/下载：14/0  |  提交时间：2023/12/25 thermal sublimation  mixed few-layer GeSe  direct bandgap  broadband spectra  GeSe nanosheets  PVD method
	Engineering of Vacancy Defects in WS2 Monolayer by Rare-Earth (Er, Tm, Lu) Doping: A First-Principles Study 期刊论文 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2023, 页码: 10 作者:  Zhao, Yang;  Yan, Bing;  Liang, Xianxiao;  Liu, Shaoxiang;  Shi, Xuan;  Zhao, Hongquan 收藏  |  浏览/下载：13/0  |  提交时间：2023/12/25 bandgap structure  optical properties  rare earth doping  vacancy defects  WS2
	Ultra-Thin GeSe/WS2 Vertical Heterojunction with Excellent Optoelectronic Performances 期刊论文 ADVANCED OPTICAL MATERIALS, 2022, 页码: 7 作者:  Yan, Bing;  Ning, Bo;  Zhang, Guoxin;  Zhou, Dahua;  Shi, Xuan;  Wang, Chunxiang;  Zhao, Hongquan 收藏  |  浏览/下载：56/0  |  提交时间：2022/08/22 2D materials  GeSe  WS  (2)  heterojunctions  optoelectronic properties  photodetectors
	Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations 期刊论文 SCIENTIFIC REPORTS, 2018, 卷号: 8, 页码: 9 作者:  Mao, Yuliang;  Mao, Xin;  Zhao, Hongquan;  Zhang, Nandi;  Shi, Xuan;  Yuan, Jianmei Adobe PDF(4539Kb)  |  收藏  |  浏览/下载：222/0  |  提交时间：2019/01/17
	Band Structure and Photoelectric Characterization of GeSe Monolayers 期刊论文 ADVANCED FUNCTIONAL MATERIALS, 2018, 卷号: 28, 期号: 6, 页码: 10 作者:  Zhao, Hongquan;  Mao, Yuliang;  Mao, Xin;  Shi, Xuan;  Xu, Congshen;  Wang, Chunxiang;  Zhang, Shangmin;  Zhou, Dahua Adobe PDF(8065Kb)  |  收藏  |  浏览/下载：540/0  |  提交时间：2018/06/04 band structures  GeSe monolayers  photoelectric devices  semiconductors
	Bandgap modulation of MoS2 monolayer by thermal annealing and quick cooling 期刊论文 NANOSCALE, 2016, 卷号: 8, 期号: 45, 页码: 18995-19003 作者:  Zhao, Hong-Quan;  Mao, Xin;  Zhou, Dahua;  Feng, Shuanglong;  Shi, Xuan;  Ma, Yong;  Wei, Xingzhan;  Mao, Yuliang Adobe PDF(1977Kb)  |  收藏  |  浏览/下载：262/0  |  提交时间：2018/03/15