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Preparation of Mixed Few-Layer GeSe Nanosheets with High Efficiency by the Thermal Sublimation Method
Wang, Chunxiang1,2,3; Shi, Xuan2; Liu, Shaoxiang2; Zhao, Hongquan4; Zhang, Wei2
2023-08-10
摘要Two-dimensional (2D) GeSe has been proven promising infast andbroadband optoelectronic applications for its complicated band structure,inert surface property, and excellent stability. The major challengeis the deficiency of the effective technique for controllably preparedlarge-scale few-to-monolayer GeSe films. For this purpose, a layer-by-layerthinning method by thermal sublimation for manufacturing large-scalemixed few-layer GeSe with direct bandgaps is proposed, and an optimizedsublimation temperature of 300 & DEG;C in vacuum is evaluated by atomicforce microscopy. Scanning electron microscopy, transmission electronmicroscopy, energy-dispersive spectra, and fluorescence mapping measurementsare performed on the thinned GeSe layers, and results are well-indexedto the orthorhombic lattice structure with direct bandgaps with anatomic ratio of Ge/Se & AP; 5:4. Raman and fluorescence spectrashow an & alpha;-type crystalline structure of the thinned GeSe films,indicating the pure physical process of the sublimation thinning.Both the bulk and few-layer GeSe films demonstrate broadband absorption.Conductivity of the few-layer GeSe device indicates the overall crystallineintegrity of the film after thermal thinning. Given the convenienceand efficiency, we provide an effective approach for fabrication oflarge-scale 2D materials that are difficult to be prepared by traditionalmethods.
关键词thermal sublimation mixed few-layer GeSe direct bandgap broadband spectra GeSe nanosheets PVD method
DOI10.1021/acsami.3c08027
发表期刊ACS APPLIED MATERIALS & INTERFACES
ISSN1944-8244
页码8
通讯作者Zhao, Hongquan(hqzhao@cigit.ac.cn) ; Zhang, Wei(zhangwei@cigit.ac.cn)
收录类别SCI
WOS记录号WOS:001045940700001
语种英语