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Tunable electronic and optical properties of WSe2/Si2H heterojunction via electric field
Liang,Xianxiao1,2; Zhao,Hongquan3; Zhao,Yang1,2; Deng,Xueyi1,2; Xiao,Zeyun2; Peng,Xiaoyu2; Yuan,Hongkuan4; Shi,Xuan1,2
2024-01-29
摘要Abstract Van der Waals heterojunctions based on two-dimensional (2D) materials hold great potential applications in photodetectors. Using the density functional theory (DFT) method, the structures, electronic and optical properties of van der Waals WSe2/Si2H heterojunction are investigated. 1.32 eV of indirect bandgap is calculated from the WSe2/Si2H heterojunction, which is 0.3 eV and 0.1 eV smaller than those of its monolayer WSe2 and Si2H. This contributes to the photocarrier generations, and the Type-II heterojunction also benefits to the separation of the photogenerated electron and hole pairs. A significant hole mobility 1.05 × 104 cm2 V?1 s?1 of the heterojunction along the y-direction is obtained. Moreover, a high Ultraviolet light (UV) absorption coefficient is presented in the heterojunction. The heterojunction transforms to Type-I under a vertical electric field, with the bandgap, orientation and amount of transfer electrons modulated sufficiently. As a result, the optical absorption coefficient of the heterojunction is also improved significantly, leading to the red-shift of the absorption spectrum. These excellent properties address the WSe2/Si2H heterojunction one of the good candidates for UV detectors.
关键词WSe2/Si2H heterojunction first principles extra electric field optical absorption coefficient
DOI10.1088/1402-4896/ad1da9
发表期刊Physica Scripta
ISSN0031-8949
卷号99期号:2
通讯作者Zhao,Hongquan() ; Yuan,Hongkuan() ; Shi,Xuan()
WOS记录号IOP:ps_99_2_025986
语种英语