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High photoresponse detectors based on Yb-doped monolayer WS2 nanosheets
Liu, Shaoxiang1,2; Zhao, Yang3; Cao, Sheng4; Chen, Sikai3; Wang, Chunxiang1; Shi, Xuan1; Zhao, Hongquan1,5
2024-04-15
摘要The study of rare-earth (RE) doping in two-dimensional (2D) transition metal dichalcogenides (TMDCs) has become an important research focus to modulate bandgaps and carriers for production of the exotic properties. Herein, approximately 7 at% of Yb substitutionally doped monolayer WS2 nanosheets are prepared by in-situ chemical vapor deposition (CVD) technique. Highly enhanced optical and electrical properties are obtained: Three times enhancement in photoluminescent intensities and 5.6 nm of red-shifts in wavelength are observed from their peaks after chemical doping. First-principles calculations based on density functional theory (DFT) demonstrate a shrinked bandgap of Yb-doped monolayer WS2 at K-point in Brillouin zone compared with that of the pristine WS2 monolayer, and a broadened absorption and reflectivity spectra from visible to near-infrared region, which is in good agreement with the experimental results. Photodetectors based on Yb-doped monolayer WS2 nanosheets show far higher of mobility (17 times), photocurrent, photoresponsivity, and external quantum efficiency than those of the pristine WS2. The results prove a high effectiveness of RE doping in 2D materials for high-performance optoelectronic devices.
关键词TMDCs Yb-doped monolayer WS 2 nanosheets CVD DFT calculations Photodetectors
DOI10.1016/j.apsusc.2024.159287
发表期刊APPLIED SURFACE SCIENCE
ISSN0169-4332
卷号652页码:10
通讯作者Shi, Xuan(shixuan@cigit.ac.cn) ; Zhao, Hongquan(hqzhao@cigit.ac.cn)
收录类别SCI
WOS记录号WOS:001154787300001
语种en