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	Engineering of Vacancy Defects in WS2 Monolayer by Rare-Earth (Er, Tm, Lu) Doping: A First-Principles Study 期刊论文 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2023, 页码: 10 Authors:  Zhao, Yang;  Yan, Bing;  Liang, Xianxiao;  Liu, Shaoxiang;  Shi, Xuan;  Zhao, Hongquan Favorite  |  View/Download：18/0  |  Submit date：2023/12/25 bandgap structure  optical properties  rare earth doping  vacancy defects  WS2
	Preparation and photoelectric characterization of p-GeSe/p-WS2 heterojunction devices 期刊论文 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 卷号: 55, 期号: 32, 页码: 9 Authors:  Yan, Bing;  Zhang, Guoxin;  Ning, Bo;  Chen, Sikai;  Zhao, Yang;  Zhou, Dahua;  Shi, Xuan;  Shen, Jun;  Xiao, Zeyun;  Zhao, Hongquan Favorite  |  View/Download：82/0  |  Submit date：2022/08/22 van der Waals heterojunction  p-p type junction  GeSe/WS2  optoelectronic properties
	Ultra-Thin GeSe/WS2 Vertical Heterojunction with Excellent Optoelectronic Performances 期刊论文 ADVANCED OPTICAL MATERIALS, 2022, 页码: 7 Authors:  Yan, Bing;  Ning, Bo;  Zhang, Guoxin;  Zhou, Dahua;  Shi, Xuan;  Wang, Chunxiang;  Zhao, Hongquan Favorite  |  View/Download：62/0  |  Submit date：2022/08/22 2D materials  GeSe  WS  (2)  heterojunctions  optoelectronic properties  photodetectors