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Ultra-Thin GeSe/WS2 Vertical Heterojunction with Excellent Optoelectronic Performances
Yan, Bing1,2; Ning, Bo1,3; Zhang, Guoxin1,2; Zhou, Dahua1; Shi, Xuan1; Wang, Chunxiang1; Zhao, Hongquan1
2022-01-22
摘要Heterostructural engineering of atomically thin 2D materials offers an exciting opportunity to fabricate atomically sharp interfaces for optoelectronic devices. Herein, GeSe/WS2 heterojunction devices composed of 2D WS2 (n-type) and few-layer GeSe (p-type), are fabricated by transferring mechanically exfoliated GeSe to chemical vapor deposition (CVD)-grown WS2. Excellent rectification behavior is observed from the I-V characteristics of the GeSe/WS2 heterojunction devices. The reverse photocurrent increases more rapidly than the forward photocurrent under a 635 nm laser illumination, indicating an effective separation of the photogenerated carriers under a minus bias. A large photocurrent on-off ratio of 10(3) at -5 V bias, a high responsivity (R-lambda) of 1.1 A W-1, a considerable specific detectivity (D*) of 1.3x10(10) Jones, and a high external quantum efficiency (EQE) of 214.8%, are obtained. Owing to the large built-in potential of the heterojunction, efficient charge transfer is achieved from the abrupt interfaces even though vastly different materials are used in the van der Waals (vdW) heterostructure. A convenient route is demonstrated for the preparation of ultra-thin GeSe/WS2 vdW heterojunctions. The results reveal great potential of the present GeSe/WS2 vertical heterojunction for future applications in optoelectronics.
关键词2D materials GeSe WS (2) heterojunctions optoelectronic properties photodetectors
DOI10.1002/adom.202102413
发表期刊ADVANCED OPTICAL MATERIALS
ISSN2195-1071
页码7
通讯作者Shi, Xuan(shixuan@cigit.ac.cn) ; Zhao, Hongquan(hqzhao@cigit.ac.cn)
收录类别SCI
WOS记录号WOS:000745532000001
语种英语