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High photoresponse detectors based on Yb-doped monolayer WS2 nanosheets 期刊论文
APPLIED SURFACE SCIENCE, 2024, 卷号: 652, 页码: 10
作者:  Liu, Shaoxiang;  Zhao, Yang;  Cao, Sheng;  Chen, Sikai;  Wang, Chunxiang;  Shi, Xuan;  Zhao, Hongquan
收藏  |  浏览/下载:180/0  |  提交时间:2024/04/07
TMDCs  Yb-doped monolayer WS 2 nanosheets  CVD  DFT calculations  Photodetectors  
Tunable electronic and optical properties of WSe2/Si2H heterojunction via electric field 期刊论文
PHYSICA SCRIPTA, 2024, 卷号: 99, 期号: 2, 页码: 12
作者:  Liang, Xianxiao;  Zhao, Hongquan;  Zhao, Yang;  Deng, Xueyi;  Xiao, Zeyun;  Peng, Xiaoyu;  Yuan, Hongkuan;  Shi, Xuan
收藏  |  浏览/下载:179/0  |  提交时间:2024/03/01
WSe2/Si2H heterojunction  first principles  extra electric field  optical absorption coefficient  
Preparation of Mixed Few-Layer GeSe Nanosheets with High Efficiency by the Thermal Sublimation Method 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2023, 页码: 8
作者:  Wang, Chunxiang;  Shi, Xuan;  Liu, Shaoxiang;  Zhao, Hongquan;  Zhang, Wei
收藏  |  浏览/下载:11/0  |  提交时间:2023/12/25
thermal sublimation  mixed few-layer GeSe  direct bandgap  broadband spectra  GeSe nanosheets  PVD method  
Preparation and photoelectric characterization of p-GeSe/p-WS2 heterojunction devices 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 卷号: 55, 期号: 32, 页码: 9
作者:  Yan, Bing;  Zhang, Guoxin;  Ning, Bo;  Chen, Sikai;  Zhao, Yang;  Zhou, Dahua;  Shi, Xuan;  Shen, Jun;  Xiao, Zeyun;  Zhao, Hongquan
收藏  |  浏览/下载:73/0  |  提交时间:2022/08/22
van der Waals heterojunction  p-p type junction  GeSe/WS2  optoelectronic properties  
Enhancement of photodetection by PbSe quantum dots on atomic-layered GeS devices 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 卷号: 53, 期号: 50, 页码: 9
作者:  Li, Yuzhi;  Shi, Xuan;  Dai, Fangbo;  Zhou, Dahua;  Jin, Minghui;  Zheng, Hongying;  Yang, Yuhui;  Zhao, Hongquan;  Wang, Junzhong
收藏  |  浏览/下载:135/0  |  提交时间:2020/12/01
hybrid-structure  atomic-layered GeS film  PbSe quantum dots  photoresponsivity  carrier mobility