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Preparation and photoelectric characterization of p-GeSe/p-WS2 heterojunction devices 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 卷号: 55, 期号: 32, 页码: 9
作者:  Yan, Bing;  Zhang, Guoxin;  Ning, Bo;  Chen, Sikai;  Zhao, Yang;  Zhou, Dahua;  Shi, Xuan;  Shen, Jun;  Xiao, Zeyun;  Zhao, Hongquan
收藏  |  浏览/下载：74/0  |  提交时间：2022/08/22
van der Waals heterojunction  p-p type junction  GeSe/WS2  optoelectronic properties  
High zero-bias responsivity induced by photogating effect in asymmetric device structure 期刊论文
OPTICAL MATERIALS, 2022, 卷号: 124, 页码: 7
作者:  Gao, Kaicong;  Ran, Shuling;  Han, Qin;  Yang, Qi;  Jiang, Hao;  Fu, Jintao;  Leng, Chongqian;  Feng, Shuanglong;  Zhou, Dahua;  Li, Zhancheng;  Li, Xin;  Huang, Deping;  Yu, Leyong;  Shen, Jun
收藏  |  浏览/下载：87/0  |  提交时间：2022/08/22
Graphene photodetector  CdS thin films  Asymmetric structure  
Ultra-Thin GeSe/WS2 Vertical Heterojunction with Excellent Optoelectronic Performances 期刊论文
ADVANCED OPTICAL MATERIALS, 2022, 页码: 7
作者:  Yan, Bing;  Ning, Bo;  Zhang, Guoxin;  Zhou, Dahua;  Shi, Xuan;  Wang, Chunxiang;  Zhao, Hongquan
收藏  |  浏览/下载：54/0  |  提交时间：2022/08/22
2D materials  GeSe  WS  (2)  heterojunctions  optoelectronic properties  photodetectors  
Improvement of sensitivity of graphene photodetector by creating bandgap structure 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 11, 页码: 5
作者:  Zhang, Ni-Zhen;  He, Meng-Ke;  Yu, Peng;  Zhou, Da-Hua
Adobe PDF(1652Kb)  |  收藏  |  浏览/下载：877/1  |  提交时间：2018/03/05
graphene  photodetector  photocurrent  bandgap  
Bandgap modulation of MoS2 monolayer by thermal annealing and quick cooling 期刊论文
NANOSCALE, 2016, 卷号: 8, 期号: 45, 页码: 18995-19003
作者:  Zhao, Hong-Quan;  Mao, Xin;  Zhou, Dahua;  Feng, Shuanglong;  Shi, Xuan;  Ma, Yong;  Wei, Xingzhan;  Mao, Yuliang
Adobe PDF(1977Kb)  |  收藏  |  浏览/下载：262/0  |  提交时间：2018/03/15