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Improvement of sensitivity of graphene photodetector by creating bandgap structure
Zhang, Ni-Zhen1; He, Meng-Ke1; Yu, Peng1; Zhou, Da-Hua2
2017-11-01
摘要Graphene has aroused large interest in optoelectronic applications because of its broad band absorption and ultrahigh electron mobility. However, the low absorption of 2.3% seriously limits its photoresponsivity and restricts the relevant applications. In this paper, a method to enhance the sensitivity of graphene photodetector is demonstrated by introducing electron trapping centers and creating a bandgap structure in graphene. The carrier lifetime obviously increases, and more carriers are collected by the electrodes. Compared with intrinsic graphene detector, the defective graphene photodetector possesses high photocurrent and low-driving-voltage, which gives rise to great potential applications in photodetector area.
关键词graphene photodetector photocurrent bandgap
DOI10.1088/1674-1056/26/11/116803
发表期刊CHINESE PHYSICS B
ISSN1674-1056
卷号26期号:11页码:5
通讯作者Yu, P (reprint author), Chongqing Normal Univ, Coll Phys & Elect Engn, Chongqing Key Lab Photoelect Funct Mat, Chongqing 401331, Peoples R China. ; Zhou, DH (reprint author), Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China.
收录类别SCI
WOS记录号WOS:000415075000003
语种英语