中国科学院重庆绿色智能技术研究院机构知识库

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限定条件	出处：ADVANCED OPTICAL MATERIALS

已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择期刊影响因子升序期刊影响因子降序作者升序作者降序题名升序题名降序WOS被引频次升序WOS被引频次降序发表日期升序发表日期降序提交时间升序提交时间降序
	Supersensitive and Broadband Photodetectors Based on High Concentration of Er3+/Yb3+ Co-doped WS2 Monolayer 期刊论文 ADVANCED OPTICAL MATERIALS, 2023, 页码: 10 作者:  Liu, Shaoxiang;  Zhao, Yang;  Huang, Zuqiang;  Chen, Yin;  Wu, Zepeng;  Liang, Xianxiao;  Liu, Xiu;  Wang, Chunxiang;  Zhao, Hongquan;  Shi, Xuan 收藏  |  浏览/下载：13/0  |  提交时间：2023/12/25 CVD  Er3+/Yb3+ co-doped WS2 monolayer  photodetectors  TMDCs
	Vertical Photodetectors Based on In Situ Aligned Single-crystalline PbS Nanocuboids Sandwiched between Graphene Electrodes 期刊论文 ADVANCED OPTICAL MATERIALS, 2023, 页码: 8 作者:  Fu, Jintao;  Yang, Chan;  Nie, Changbin;  Sun, Feiying;  Li, Genglin;  Feng, Shuanglong;  Wei, Xingzhan 收藏  |  浏览/下载：11/0  |  提交时间：2023/12/25 electrochemistry  graphene electrodes  PbS nanocuboids  photogating effect  vertical channel
	Photo-Driven Semimetal-Semiconductor Field-Effect Transistors 期刊论文 ADVANCED OPTICAL MATERIALS, 2022, 页码: 8 作者:  Fu, Jintao;  Nie, Changbin;  Sun, Feiying;  Jiang, Hao;  Li, Yunjie;  Li, Genglin;  Wei, Xingzhan 收藏  |  浏览/下载：72/0  |  提交时间：2023/01/03 gain  graphene  metal-semiconductor field-effect transistors  phototransistors  photovoltage
	Ultra-Thin GeSe/WS2 Vertical Heterojunction with Excellent Optoelectronic Performances 期刊论文 ADVANCED OPTICAL MATERIALS, 2022, 页码: 7 作者:  Yan, Bing;  Ning, Bo;  Zhang, Guoxin;  Zhou, Dahua;  Shi, Xuan;  Wang, Chunxiang;  Zhao, Hongquan 收藏  |  浏览/下载：53/0  |  提交时间：2022/08/22 2D materials  GeSe  WS  (2)  heterojunctions  optoelectronic properties  photodetectors