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Photo-Driven Semimetal-Semiconductor Field-Effect Transistors
Fu, Jintao1,2; Nie, Changbin1,2; Sun, Feiying1; Jiang, Hao1; Li, Yunjie3,4; Li, Genglin3,4; Wei, Xingzhan1,2,3
2022-11-30
摘要Photodetectors that can simultaneously exhibit high gain, fast response, and low dark current are of significant value in modern optoelectronic systems. However, the recently reported photovoltage-driven phototransistors are encountering certain challenges to meet the above requirement. In this work, a "photo-driven" semi-metal-semiconductor field-effect transistor (photo-sMESFET), based on graphene/silicon-on-insulator hybrid structure, is proposed and demonstrated to realize the synchronous optimization of gain, response speed, and dark current. Taking advantage of the unique semimetal characteristics of graphene, a high-quality Schottky junction between graphene and silicon is produced, which can greatly deplete the silicon channel and suppress dark current. After illumination, the photovoltage at graphene-silicon interface efficiently shrinks the depletion layer and tremendously enhances the channel conductance. Combined with the high transconductance of the silicon channel, the photo-sMESFET exhibits a gain of more than 10(4), a fast response time (tau) of 3 mu s, and a low dark current (J(d)) of 2.5 mu A. Furthermore, the figure of merit, GTD=(Gainx tau)/Jd\[{\rm{GTD}} = ({\rm{Gain}}{\bm{ \times }}\tau )/\sqrt {{J_d}} \], evaluating the comprehensive performance on photodetectors, is up to 8 x 10(8) A(1/2) cm s(-1), which is superior to the counterparts of graphene-based photodetectors. The results presented leverage a new detection strategy based on the semimetal-semiconductor photovoltaic effect.
关键词gain graphene metal-semiconductor field-effect transistors phototransistors photovoltage
DOI10.1002/adom.202201983
发表期刊ADVANCED OPTICAL MATERIALS
ISSN2195-1071
页码8
通讯作者Wei, Xingzhan(weixingzhan@cigit.ac.cn)
收录类别SCI
WOS记录号WOS:000892436100001
语种英语