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Ultra-Thin GeSe/WS2 Vertical Heterojunction with Excellent Optoelectronic Performances 期刊论文
ADVANCED OPTICAL MATERIALS, 2022, 页码: 7
作者:  Yan, Bing;  Ning, Bo;  Zhang, Guoxin;  Zhou, Dahua;  Shi, Xuan;  Wang, Chunxiang;  Zhao, Hongquan
收藏  |  浏览/下载：53/0  |  提交时间：2022/08/22
2D materials  GeSe  WS  (2)  heterojunctions  optoelectronic properties  photodetectors  
Fast and Broadband Photoresponse of a Few-Layer GeSe Field-Effect Transistor with Direct Band Gaps 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 41, 页码: 38031-38038
作者:  Zhao, Hongquan;  Yang, Yuhui;  Wang, Chunxiang;  Zhou, Dahua;  Shi, Xuan;  Li, Yuzhi;  Mao, Yuliang
收藏  |  浏览/下载：104/0  |  提交时间：2020/08/24
few-layer GeSe  field-effect transistors  photoresponse time  broadband photoresponse  direct band gaps  ambipolar behavior  
Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations 期刊论文
SCIENTIFIC REPORTS, 2018, 卷号: 8, 页码: 9
作者:  Mao, Yuliang;  Mao, Xin;  Zhao, Hongquan;  Zhang, Nandi;  Shi, Xuan;  Yuan, Jianmei
Adobe PDF(4539Kb)  |  收藏  |  浏览/下载：220/0  |  提交时间：2019/01/17
Toxic gases molecules (NH3, SO2 and NO2) adsorption on GeSe monolayer with point defects engineering 期刊论文
CHEMICAL PHYSICS LETTERS, 2018, 卷号: 706, 页码: 501-508
作者:  Mao, Yuliang;  Long, Linbo;  Yuan, Jianmei;  Zhong, Jianxin;  Zhao, Hongquan
Adobe PDF(3324Kb)  |  收藏  |  浏览/下载：262/0  |  提交时间：2018/09/25
Monolayer Gese  Point Defect  First-principles  Work Function  
Effect of stacking order and in-plane strain on the electronic properties of bilayer GeSe 期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2018, 卷号: 20, 期号: 10, 页码: 6929-6935
作者:  Mao, Yuliang;  Xu, Congshen;  Yuan, Jianmei;  Zhao, Hongquan
Adobe PDF(1366Kb)  |  收藏  |  浏览/下载：266/0  |  提交时间：2018/06/04