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The Electrical Behaviors of Grain Boundaries in Polycrystalline Optoelectronic Materials 期刊论文
ADVANCED MATERIALS, 2023, 页码: 18
作者:  Gao, Zheng;  Leng, Chongqian;  Zhao, Hongquan;  Wei, Xingzhan;  Shi, Haofei;  Xiao, Zeyun
收藏  |  浏览/下载:177/0  |  提交时间:2024/01/17
grain boundaries  optoelectronics  polycrystalline materials  potential barrier  twin boundaries  
Preparation and photoelectric characterization of p-GeSe/p-WS2 heterojunction devices 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 卷号: 55, 期号: 32, 页码: 9
作者:  Yan, Bing;  Zhang, Guoxin;  Ning, Bo;  Chen, Sikai;  Zhao, Yang;  Zhou, Dahua;  Shi, Xuan;  Shen, Jun;  Xiao, Zeyun;  Zhao, Hongquan
收藏  |  浏览/下载:76/0  |  提交时间:2022/08/22
van der Waals heterojunction  p-p type junction  GeSe/WS2  optoelectronic properties  
Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations 期刊论文
SCIENTIFIC REPORTS, 2018, 卷号: 8, 页码: 9
作者:  Mao, Yuliang;  Mao, Xin;  Zhao, Hongquan;  Zhang, Nandi;  Shi, Xuan;  Yuan, Jianmei
Adobe PDF(4539Kb)  |  收藏  |  浏览/下载:223/0  |  提交时间:2019/01/17