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Synergistic-potential engineering enables high-efficiency graphene photodetectors for near- to mid-infrared light 期刊论文
NATURE COMMUNICATIONS, 2024, 卷号: 15, 期号: 1, 页码: 9
作者:  Jiang, Hao;  Fu, Jintao;  Wei, Jingxuan;  Li, Shaojuan;  Nie, Changbin;  Sun, Feiying;  Wu, Qing Yang Steve;  Liu, Mingxiu;  Dong, Zhaogang;  Wei, Xingzhan;  Gao, Weibo;  Qiu, Cheng-Wei
收藏  |  浏览/下载：5/0  |  提交时间：2024/04/07
Enhanced Photogating Effect in Graphene Photodetectors via Potential Fluctuation Engineering 期刊论文
ACS NANO, 2022, 卷号: 16, 期号: 3, 页码: 4458-4466
作者:  Jiang, Hao;  Wei, Jingxuan;  Sun, Feiying;  Nie, Changbin;  Fu, Jintao;  Shi, Haofei;  Sun, Jiuxun;  Wei, Xingzhan;  Qiu, Cheng-Wei
收藏  |  浏览/下载：89/0  |  提交时间：2022/08/22
photogating effect  graphene  infrared photodetector  potential fluctuation engineering  silicon grating  
High zero-bias responsivity induced by photogating effect in asymmetric device structure 期刊论文
OPTICAL MATERIALS, 2022, 卷号: 124, 页码: 7
作者:  Gao, Kaicong;  Ran, Shuling;  Han, Qin;  Yang, Qi;  Jiang, Hao;  Fu, Jintao;  Leng, Chongqian;  Feng, Shuanglong;  Zhou, Dahua;  Li, Zhancheng;  Li, Xin;  Huang, Deping;  Yu, Leyong;  Shen, Jun
收藏  |  浏览/下载：85/0  |  提交时间：2022/08/22
Graphene photodetector  CdS thin films  Asymmetric structure  
Dual-Color Photodetection Based on Speed-Differentiated Photoresponse with High Photogain 期刊论文
ACS PHOTONICS, 2021, 卷号: 8, 期号: 4, 页码: 1027-1033
作者:  Yang, Qi;  Shen, Jun;  Jiang, Hao;  Leng, Chongqian;  Zhang, Zhisheng;  Nie, Changbin;  Huang, Deping;  Li, Xin;  Feng, Shuanglong;  Zhou, Dahua;  Luo, Wei;  Yao, Wei;  Wang, Lu;  Sun, Ling;  Wei, Xingzhan
收藏  |  浏览/下载：204/0  |  提交时间：2021/08/20
photodetectors  graphene  photogain  dual-color  extraction  
Hybrid graphene heterojunction photodetector with high infrared responsivity through barrier tailoring 期刊论文
NANOTECHNOLOGY, 2019, 卷号: 30, 期号: 19, 页码: 7
作者:  Zhou, Quan;  Shen, Jun;  Liu, Xiangzhi;  Li, Zhancheng;  Jiang, Hao;  Feng, Shuanglong;  Feng, Wenlin;  Wang, Yuefeng;  Wei, Dapeng
Adobe PDF(1134Kb)  |  收藏  |  浏览/下载：242/0  |  提交时间：2019/03/25
graphene  silicon  Schottky junction  barrier height  infrared photodetector