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	Enhanced Photogating Effect in Graphene Photodetectors via Potential Fluctuation Engineering
	Jiang, Hao1,2; Wei, Jingxuan2; Sun, Feiying3; Nie, Changbin3; Fu, Jintao2; Shi, Haofei3; Sun, Jiuxun1; Wei, Xingzhan3; Qiu, Cheng-Wei2
	2022-03-22
摘要	The photogating effect in hybrid structures has manifested itself as a reliable and promising approach for photodetectors with ultrahigh responsivity. A crucial factor of the photogating effect is the built-in potential at the interface, which controls the separation and harvesting of photogenerated carriers. So far, the primary efforts of designing the built-in potential rely on discovering different materials and developing multilayer structures, which may raise problems in the compatibility with the standard semiconductor production line. Here, we report an enhanced photogating effect in a monolayer graphene photodetector based on a structured substrate, where the built-in potential is established by the mechanism of potential fluctuation engineering. We find that the enhancement factor of device responsivity is related to a newly defined parameter, namely, fluctuation period rate (P-f). Compared to the device without a nanostructured substrate, the responsivity of the device with an optimized P-f is enhanced by 100 times, reaching a responsivity of 240 A/W and a specific detectivity, D*, of 3.4 x 10(12) Jones at 1550 nm wavelength and room temperature. Our experimental results are supported by both theoretical analysis and numerical simulation. Since our demonstration of the graphene photodetectors leverages the engineering of structures with monolayer graphene rather than materials with a multilayer complex structure. it should be universal and applicable to other hybrid photodetectors.
关键词	photogating effect graphene infrared photodetector potential fluctuation engineering silicon grating
DOI	10.1021/acsnano.1c10795
发表期刊	ACS NANO
ISSN	1936-0851
卷号	16期号:3页码:4458-4466
通讯作者	Sun, Jiuxun(sjx@uestc.edu.cn) ; Wei, Xingzhan(weixingzhan@cigit.ac.cn) ; Qiu, Cheng-Wei(chengwei.qiu@nus.edu.sg)
收录类别	SCI
WOS记录号	WOS:000780214300088
语种	英语