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Synergistic-potential engineering enables high-efficiency graphene photodetectors for near- to mid-infrared light
Jiang, Hao1,2,3; Fu, Jintao1; Wei, Jingxuan4; Li, Shaojuan5; Nie, Changbin1; Sun, Feiying1; Wu, Qing Yang Steve6; Liu, Mingxiu5; Dong, Zhaogang6; Wei, Xingzhan1
2024-02-09
摘要High quantum efficiency and wide-band detection capability are the major thrusts of infrared sensing technology. However, bulk materials with high efficiency have consistently encountered challenges in integration and operational complexity. Meanwhile, two-dimensional (2D) semimetal materials with unique zero-bandgap structures are constrained by the bottleneck of intrinsic quantum efficiency. Here, we report a near-mid infrared ultra-miniaturized graphene photodetector with configurable 2D potential well. The 2D potential well constructed by dielectric structures can spatially (laterally and vertically) produce a strong trapping force on the photogenerated carriers in graphene and inhibit their recombination, thereby improving the external quantum efficiency (EQE) and photogain of the device with wavelength-immunity, which enable a high responsivity of 0.2 A/W-38 A/W across a broad infrared detection band from 1.55 to 11 mu m. Thereafter, a room-temperature detectivity approaching 1 x 109 cm Hz1/2 W-1 is obtained under blackbody radiation. Furthermore, a synergistic effect of electric and light field in the 2D potential well enables high-efficiency polarization-sensitive detection at tunable wavelengths. Our strategy opens up alternative possibilities for easy fabrication, high-performance and multifunctional infrared photodetectors. The integration of 2D materials with metasurfaces can enhance their quantum efficiency, but the approach is usually limited to a narrow spectral band. Here, the authors report the realization of gate-tunable graphene photodetectors combined with all-dielectric periodic slits, leading to enhanced photoresponse in the short-to-long-wave infrared.
DOI10.1038/s41467-024-45498-3
发表期刊NATURE COMMUNICATIONS
卷号15期号:1页码:9
通讯作者Dong, Zhaogang(dongz@imre.a-star.edu.sg) ; Wei, Xingzhan(weixingzhan@cigit.ac.cn) ; Gao, Weibo(wbgao@ntu.edu.sg) ; Qiu, Cheng-Wei(chengwei.qiu@nus.edu.sg)
收录类别SCI
WOS记录号WOS:001160940300021
语种en