中国科学院重庆绿色智能技术研究院机构知识库

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出处：CARBON

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	Carbon nanotubes field-effect transistor pressure sensor based on three-dimensional conformal force-sensitive gate modulation 期刊论文 CARBON, 2023, 卷号: 204, 页码: 456-464 作者:  Cheng, Guanyin;  Xu, Haitao;  Gao, Ningfei;  Zhang, Mengqin;  Gao, Hailin;  Sun, Bihao;  Gu, Mingxin;  Yu, Leyong;  Lin, Yuanchang;  Liu, Xueqin;  He, Guotian;  Wei, Dapeng 收藏  |  浏览/下载：529/0  |  提交时间：2023/04/06 CNTs film  Field-effect transistor  Carbon nanowall  Pressure sensor
	Gate modulation enhanced position-sensitive detectors using graphene/silicon-on-insulator structure 期刊论文 CARBON, 2021, 卷号: 184, 页码: 445-451 作者:  Jiang, Hao;  Fu, Jintao;  Nie, Changbin;  Sun, Feiying;  Tang, Linlong;  Sun, Jiuxun;  Zhu, Meng;  Shen, Jun;  Feng, Shuanglong;  Shi, Haofei;  Wei, Xingzhan 收藏  |  浏览/下载：184/0  |  提交时间：2021/11/26 Graphene  Silicon-on-insulator  Position-sensitive detector  Gate manipulation
	Tandem gasochromic-Pd-WO3/graphene/Si device for room-emperature high-performance optoelectronic hydrogen sensors 期刊论文 CARBON, 2018, 卷号: 130, 页码: 281-287 作者:  Chen, Mingyuan;  Zou, Liping;  Zhang, Zenghai;  Shen, Jun;  Li, Dong;  Zong, Qijun;  Gao, Guohua;  Wu, Guangming;  Shen, Jun;  Zhang, Zengxing Adobe PDF(1519Kb)  |  收藏  |  浏览/下载：126/0  |  提交时间：2018/06/04
	The effect of adsorbed species and exposure to sulfuric acid on the electrical conductance of individual single-wall carbon nanotube transistors 期刊论文 CARBON, 2012, 卷号: 50, 期号: 10, 页码: 3953-3956 作者:  Shen, Jun;  Puech, Pascal;  Ondarcuhu, Thierry;  Escoffier, Walter;  Raquet, Bertrand;  Monthioux, Marc Adobe PDF(495Kb)  |  收藏  |  浏览/下载：90/0  |  提交时间：2018/03/15