中文版 | English
CSpace
Gate modulation enhanced position-sensitive detectors using graphene/silicon-on-insulator structure
Jiang, Hao1,2; Fu, Jintao2,3; Nie, Changbin2,3; Sun, Feiying2; Tang, Linlong2; Sun, Jiuxun1; Zhu, Meng4; Shen, Jun2; Feng, Shuanglong2; Shi, Haofei2
2021-10-30
摘要In this paper, a position-sensitive detector (PSD) with an enhanced position detection performance has been proposed using graphene-silicon-on-insulator (GSOI) structure. By introducing the gate manipulation, the separation efficiency and diffusion speed of the photo-induced charges have been greatly improved. We experimentally observe a 10-fold increase in the generated photocurrent and the response time is shorten by around 8 times, compared to the counterpart without modulation. High position sensitivity (518 mu A/mm) to weak-light-sensing, long-distance-sensing (1.2 mm) and good linearity (nonlinearity <2%) are also achieved. The proposed device concept also provides a guidance to improve the performance of other kind of two-dimensional materials based PSDs. (C) 2021 Elsevier Ltd. All rights reserved.
关键词Graphene Silicon-on-insulator Position-sensitive detector Gate manipulation
DOI10.1016/j.carbon.2021.08.041
发表期刊CARBON
ISSN0008-6223
卷号184页码:445-451
通讯作者Sun, Jiuxun(sjx@uestc.edu.cn) ; Shi, Haofei(shi@cigit.ac.cn) ; Wei, Xingzhan(weixingzhan@cigit.ac.cn)
收录类别SCI
WOS记录号WOS:000701949400007
语种英语