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Carbon nanotubes field-effect transistor pressure sensor based on three-dimensional conformal force-sensitive gate modulation
Cheng, Guanyin1,2; Xu, Haitao3; Gao, Ningfei3; Zhang, Mengqin1,2; Gao, Hailin2; Sun, Bihao2; Gu, Mingxin2; Yu, Leyong2; Lin, Yuanchang2; Liu, Xueqin1
2023-02-01
摘要Pressure sensors based on field-effect transistor mechanism has received a lot of attention from researchers, which can effectively suppress low contrast and crosstalk effects. In this paper, we demonstrate a pressure sensor based on carbon nanotube field-effect transistor (CNTs-FET) and three-dimensional conformal force-sensitive top electrode with high sensitivity and easy integration. The high mobility field-effect transistor sensors were pre-pared using CNTs films with 99.9999% semiconductor concentration as the channel material. Conformal gra-phene nanowalls (GNWs) film on pyramidal micro-structure arrays worked as force-sensitive top electrode, the field-effect transistor sensor shows a sensitivity of 946.23 kPa-1 and 43.79 kPa-1 in the linear range of 0-30 Pa and 0.03-10 kPa, much higher than piezoresistive sensor (the sensitivity of about 377.73 kPa-1) and capacitive sensor (the sensitivity of 115.78 kPa-1). And the sensitivity and range of the sensor can be adjusted by the force -sensitive layer orientation design. Additionally, the sensor's response time is less than 30 ms, the recovery time is about 30 ms. The field-effect pressure sensor could detect ultra-low pressure (about 1.3 mg) of the chrysan-themum petals, and also could record the dynamic crawling process of the insect.
关键词CNTs film Field-effect transistor Carbon nanowall Pressure sensor
DOI10.1016/j.carbon.2022.12.090
发表期刊CARBON
ISSN0008-6223
卷号204页码:456-464
通讯作者Wei, Dapeng(dpwei@cigit.ac.cn)
收录类别SCI
WOS记录号WOS:000923508900001
语种英语