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Fast and Broadband Photoresponse of a Few-Layer GeSe Field-Effect Transistor with Direct Band Gaps 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 41, 页码: 38031-38038
作者:  Zhao, Hongquan;  Yang, Yuhui;  Wang, Chunxiang;  Zhou, Dahua;  Shi, Xuan;  Li, Yuzhi;  Mao, Yuliang
收藏  |  浏览/下载:104/0  |  提交时间:2020/08/24
few-layer GeSe  field-effect transistors  photoresponse time  broadband photoresponse  direct band gaps  ambipolar behavior  
Improvement of sensitivity of graphene photodetector by creating bandgap structure 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 11, 页码: 5
作者:  Zhang, Ni-Zhen;  He, Meng-Ke;  Yu, Peng;  Zhou, Da-Hua
Adobe PDF(1652Kb)  |  收藏  |  浏览/下载:871/1  |  提交时间:2018/03/05
graphene  photodetector  photocurrent  bandgap