中国科学院重庆绿色智能技术研究院机构知识库

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限定条件	作者：周大华    第一作者

已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择期刊影响因子升序期刊影响因子降序作者升序作者降序题名升序题名降序WOS被引频次升序WOS被引频次降序发表日期升序发表日期降序提交时间升序提交时间降序
	High zero-bias responsivity induced by photogating effect in asymmetric device structure 期刊论文 OPTICAL MATERIALS, 2022, 卷号: 124, 页码: 7 作者:  Gao, Kaicong;  Ran, Shuling;  Han, Qin;  Yang, Qi;  Jiang, Hao;  Fu, Jintao;  Leng, Chongqian;  Feng, Shuanglong;  Zhou, Dahua;  Li, Zhancheng;  Li, Xin;  Huang, Deping;  Yu, Leyong;  Shen, Jun 收藏  |  浏览/下载：87/0  |  提交时间：2022/08/22 Graphene photodetector  CdS thin films  Asymmetric structure
	High-performance mid-infrared photodetection based on Bi2Se3 maze and free-standing nanoplates 期刊论文 Nanotechnology, 2020, 卷号: 32, 期号: 10 作者:  Luo,Shi;  Li,JiaLu;  Sun,Tai;  Liu,Xiangzhi;  Wei,Dacheng;  Zhou,Dahua;  Shen,Jun;  Wei,Dapeng 收藏  |  浏览/下载：222/0  |  提交时间：2021/02/24 photodetector  Bi2Se3  infrared  2D materials
	Fast and Broadband Photoresponse of a Few-Layer GeSe Field-Effect Transistor with Direct Band Gaps 期刊论文 ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 41, 页码: 38031-38038 作者:  Zhao, Hongquan;  Yang, Yuhui;  Wang, Chunxiang;  Zhou, Dahua;  Shi, Xuan;  Li, Yuzhi;  Mao, Yuliang 收藏  |  浏览/下载：104/0  |  提交时间：2020/08/24 few-layer GeSe  field-effect transistors  photoresponse time  broadband photoresponse  direct band gaps  ambipolar behavior
	Light Trapping in Conformal Graphene/Silicon Nanoholes for High-Performance Photodetectors 期刊论文 ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 33, 页码: 30421-30429 作者:  Yang, Jun;  Tang, Linlong;  Luo, Wei;  Shen, Jun;  Zhou, Dahua;  Feng, Shuanglong;  Wei, Xingzhan;  Shi, Haofei 收藏  |  浏览/下载：203/0  |  提交时间：2019/12/03 graphene  photodetector  light trapping silicon nanostructures  conformal
	Band Structure and Photoelectric Characterization of GeSe Monolayers 期刊论文 ADVANCED FUNCTIONAL MATERIALS, 2018, 卷号: 28, 期号: 6, 页码: 10 作者:  Zhao, Hongquan;  Mao, Yuliang;  Mao, Xin;  Shi, Xuan;  Xu, Congshen;  Wang, Chunxiang;  Zhang, Shangmin;  Zhou, Dahua Adobe PDF(8065Kb)  |  收藏  |  浏览/下载：537/0  |  提交时间：2018/06/04 band structures  GeSe monolayers  photoelectric devices  semiconductors
	Towards high-performance transistors and photodetectors with monolayer graphene through modified transfer and lithography process 期刊论文 MATERIALS EXPRESS, 2017, 卷号: 7, 期号: 3, 页码: 230-236 作者:  Ge, Bangtong;  Zhou, Dahua;  Zhang, Weiguo;  Feng, Shuanglong;  Sun, Lidong;  Shen, Jun 收藏  |  浏览/下载：83/0  |  提交时间：2018/03/05 Graphene  Photodetector  Polymer Residue  Photoresponsivity  Mobility