中国科学院重庆绿色智能技术研究院机构知识库

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发表日期：2020

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	High-performance mid-infrared photodetection based on Bi2Se3 maze and free-standing nanoplates 期刊论文 Nanotechnology, 2020, 卷号: 32, 期号: 10 作者:  Luo,Shi;  Li,JiaLu;  Sun,Tai;  Liu,Xiangzhi;  Wei,Dacheng;  Zhou,Dahua;  Shen,Jun;  Wei,Dapeng 收藏  |  浏览/下载：221/0  |  提交时间：2021/02/24 photodetector  Bi2Se3  infrared  2D materials
	Recent research progress of non-noble metal based surface-enhanced Raman scattering substrates 期刊论文 ACTA PHYSICA SINICA, 2020, 卷号: 69, 期号: 19, 页码: 12 作者:  Liu Xiao-Hong;  Jiang Shan;  Chang Lin;  Zhang Wei 收藏  |  浏览/下载：201/0  |  提交时间：2020/12/08 non-noble metal materials  surface-enhanced Raman scattering substrate  semiconductor  Raman spectroscopy
	1D porous tubular g-C3N4 capture black phosphorus quantum dots as 1D/0D metal-free photocatalysts for oxytetracycline hydrochloride degradation and hexavalent chromium reduction 期刊论文 APPLIED CATALYSIS B-ENVIRONMENTAL, 2020, 卷号: 273, 页码: 13 作者:  Wang, Wenjun;  Niu, Qiuya;  Zeng, Guangming;  Zhang, Chen;  Huang, Danlian;  Shao, Binbin;  Zhou, Chengyun;  Yang, Yang;  Liu, Yuxin;  Guo, Hai;  Xiong, Weiping;  Lei, Lei;  Liu, Shiyu;  Yi, Huan;  Chen, Sha;  Tang, Xiang 收藏  |  浏览/下载：1120/0  |  提交时间：2020/08/24 BPQDs  Tubular g-C3N4  Cr(VI) reduction  Oxytetracycline hydrochloride  Density functional theory
	Effects of electrode thickness and crystal water on pseudocapacitive performance of layered birnessite MnO2 期刊论文 NANOTECHNOLOGY, 2020, 卷号: 31, 期号: 21, 页码: 8 作者:  Li, Xu;  Xiang, Lu;  Xie, Xiong;  Zhang, Chunyang;  Liu, Shuangyi;  Li, Zhenhu;  Shen, Jun 收藏  |  浏览/下载：122/0  |  提交时间：2020/08/24 birnessite  thickness effect  crystal water effect  supercapacitor
	Low Voltage Graphene-Based Amplitude Modulator for High Efficiency Terahertz Modulation 期刊论文 NANOMATERIALS, 2020, 卷号: 10, 期号: 3, 页码: 12 作者:  Zheng, Qianying;  Xia, Liangping;  Tang, Linlong;  Du, Chunlei;  Cui, Hongliang 收藏  |  浏览/下载：137/0  |  提交时间：2020/08/24 terahertz  amplitude modulation  transmittance  single-layer graphene  metamaterial  solid electrolyte  field-effect transistor