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Band engineering and precipitation enhance thermoelectric performance of SnTe with Zn-doping 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 4, 页码: 5
作者:  Chen, Zhiyu;  Wang, Ruifeng;  Wang, Guoyu;  Zhou, Xiaoyuan;  Wang, Zhengshang;  Yin, Cong;  Hu, Qing;  Zhou, Binqiang;  Tang, Jun;  Ang, Ran
Adobe PDF(5114Kb)  |  收藏  |  浏览/下载:184/0  |  提交时间:2018/07/02
thermoelectric materials  chalcogenide  band engineering  precipitation  
Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 6, 页码: 5
作者:  Dai Chong-Chong;  Liu Xue-Chao;  Zhou Tian-Yu;  Zhuo Shi-Yi;  Shi Biao;  Shi Er-Wei
Adobe PDF(780Kb)  |  收藏  |  浏览/下载:52/0  |  提交时间:2018/03/15
Al/3C-SiC  ohmic contact  specific contact resistance