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Entropy Engineered Cubic n-Type AgBiSe2 Alloy with High Thermoelectric Performance in Fully Extended Operating Temperature Range 期刊论文
ADVANCED ENERGY MATERIALS, 2020, 页码: 9
作者:  Zhu, Huaxing;  Zhao, Ting;  Zhang, Bin;  An, Zibing;  Mao, Shengcheng;  Wang, Guoyu;  Han, Xiaodong;  Lu, Xu;  Zhang, Jiangwei;  Zhou, Xiaoyuan
收藏  |  浏览/下载:149/0  |  提交时间:2021/03/01
cubic AgBiSe  (2)  entropy engineering  local structure distortion  phase transitions  thermoelectric performance  
Enhancement of photodetection by PbSe quantum dots on atomic-layered GeS devices 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 卷号: 53, 期号: 50, 页码: 9
作者:  Li, Yuzhi;  Shi, Xuan;  Dai, Fangbo;  Zhou, Dahua;  Jin, Minghui;  Zheng, Hongying;  Yang, Yuhui;  Zhao, Hongquan;  Wang, Junzhong
收藏  |  浏览/下载:136/0  |  提交时间:2020/12/01
hybrid-structure  atomic-layered GeS film  PbSe quantum dots  photoresponsivity  carrier mobility  
Effect of Air Atmosphere Sensitization on Formation of PbSe p-n Junctions for High-Performance Photodetectors 期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2020, 页码: 7
作者:  Yan, Shunya;  Yang, Qi;  Feng, Shuanglong;  Shen, Jun;  Yang, Jun;  Tang, Linlong;  Leng, Chongqian;  Zhou, Dahua
收藏  |  浏览/下载:126/0  |  提交时间:2020/08/24
PbSe  infrared detector  sensitized mechanism  p-n junction