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Improving thermoelectric performance of p-type Ag-doped Mg2Si0.4Sn0.6 prepared by unique melt spinning method
Tang, Xiaodan1,2; Zhang, Yumeng1; Zheng, Yong1; Peng, Kunling1,2; Huang, Tianyu2; Lu, Xu1; Wang, Guoyu2; Wang, Shuxia1; Zhou, Xiaoyuan1
2017
摘要In our work, p-type Mg2−xAgxSi0.4Sn0.6 (x = 0.00, 0.01, 0.02, 0.05, 0.07) compounds with single-phase are successfully synthesized via a home-made melt spinning (MS) system followed by spark plasma sintering (SPS). This unique process not only largely shortens the time of sample preparation compared with the traditional methods, but also successfully prevents the presence of MgO impurity phase. All samples are single-phase solid solutions with an anti-fluorite structure as identified by XRD. The thermoelectric properties of Mg2−xAgxSi0.4Sn0.6 compounds were measured from room temperature to 773 K. The final results indicate that (1) Ag serves as effective holes donor and (2) the electrical conductivity rises rapidly and the thermal conductivity decreases with increasing Ag content until x = 0.05. As a result, a peak dimensionless figure of merit ZT value of 0.45 at 690 K is achieved when x = 0.05. The enhanced thermoelectric performance coupled with the drastically reduced processing time will be of considerable significance to the commercial-scale production of Mg2X (X = Si, Ge, and Sn) thermoelectric material. © 2016 Elsevier Ltd
DOI10.1016/j.applthermaleng.2016.05.146
发表期刊Applied Thermal Engineering
ISSN13594311
卷号111页码:1396-1400
收录类别EI
语种英语