中国科学院重庆绿色智能技术研究院机构知识库

QQ客服 官方微博 反馈留言

	Effect of Sn Doping in (Bi0.25Sb0.75)2−xSnxTe3 (0 ≤ x ≤ 0.1) on Thermoelectric Performance
	Cai, Zhengwei1; Guo, Lijie1; Xu, Xiaolong1; Yan, Yanci1; Peng, Kunling1; Wang, Guiwen1,2; Wang, Guoyu2; Zhou, Xiaoyuan1
	2016
摘要	We report the effect of Sn doping on the thermoelectric performance of (Bi0.25Sb0.75)2−xSnxTe3 compounds (x = 0, 0.005, 0.01, 0.05, 0.1, 0.2) synthesized by the melting method followed by high-energy ball milling and spark plasma sintering. As indicated by transmission electron microscopy and scanning electron microscopy images, layered structure and inhomogeneous nanostructures are present in (Bi0.25Sb0.75)2−xSnxTe3. It is found that Sn doping dramatically reduces the thermal conductivity together with a minor decline in the electrical conductivity, yielding a net enhancement of the figure of merit (ZT). The highest ZT value is approximately 1.03 at 338 K when x is 0.01, an increase of 28.4% compared with the pure sample. © 2015, The Minerals, Metals & Materials Society.
DOI	10.1007/s11664-015-4061-5
发表期刊	Journal of Electronic Materials
ISSN	03615235
卷号	45期号:3页码:1441-1446
收录类别	EI
语种	英语
EISSN	1543186X