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	Induced synthesis of vertically oriented multilayer MoS2 via CVD method
	Liu, Shuang1,2; Nie, Changbin1
	2019
摘要	Fabrication of nanostructured MoS2 for photodetector applications has become increasingly attractive due to its atomically thin profile and favorable bandgap. In this paper, vertically oriented multilayer MoS2 (V-MoS2) are grown directly on a SiO2 substrate by chemical vapor deposition (CVD) with TiO2 being adopted as an induced precursor for the first time. The interim morphologies of the synthesized MoS2 are investigated and the growth mechanism of the MoS2 film is proposed. © 2019 Published under licence by IOP Publishing Ltd.
语种	英语
DOI	10.1088/1757-899X/563/2/022002
会议(录)名称	2019 2nd International Conference on Advanced Electronic Materials, Computers and Materials Engineering, AEMCME 2019
收录类别	EI
会议地点	Changsha, China
会议日期	April 19, 2019 - April 21, 2019