中国科学院重庆绿色智能技术研究院机构知识库

QQ客服 官方微博 反馈留言

	Spontaneously promoted carrier mobility and strengthened phonon scattering in p-type YbZn2Sb2 via a nanocompositing approach
	Zhang, Xiong1,2,4; Zhang, Bin2; Peng, Kun-ling2; Shen, Xing-chen2; Wu, Gui-tai1; Yan, Yan-ci2; Luo, Shi-jun2,4; Lu, Xu2; Wang, Guo-yu3; Gu, Hao-shuang1
	2018
摘要	Conventional strategies for advancing thermoelectrics via nanocompositing focus on the enhanced phonon scattering induced by nanostructured phase. Here, an effective approach of combining carrier mobility promotion and strengthened phonons scattering to simultaneously improve electrical and thermal transport properties is demonstrated. For the p-type YbZn2Sb2 with InSb nanoinclusions, the Hall mobility is effectively enhanced by InSb in the whole measured temperature, from 56 cm(2) V-1 s(-1) to 162 cm(2) V-1 s(-1) at 300 K. Meanwhile, the carrier density optimization by tuning Yb vacancies leads to 46% improvement in the Seebeck coefficient, overcoming the negative contribution from InSb. Moreover, with the help of interface scattering caused by nanoinclusions, the lattice thermal conductivity is reduced by 45% at 720 K. As a result, the thermoelectric figure of merit ZT is enhanced nearly a factor of three. We believe our method provides a "combined strategy" to enhance thermoelectric performance of YbZn2Sb2 based compounds and should be applicable to other thermoelectric materials.
关键词	Thermoelectric Nanocompositing Carrier density Mobility Phonon scattering
DOI	10.1016/j.nanoen.2017.11.019
发表期刊	NANO ENERGY
ISSN	2211-2855
卷号	43页码:159-167
收录类别	SCI
WOS记录号	WOS:000419832100019
语种	英语