中国科学院重庆绿色智能技术研究院机构知识库

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	Promoted high temperature carrier mobility and thermoelectric performance of InTe enabled by altering scattering mechanism
	Zhu, Huaxing1; Zhang, Bin2; Wang, Guiwen2; Peng, Kunling1; Yan, Yanci1; Zhang, Qing3,4; Han, Xiaodong3,4; Wang, Guoyu5; Lu, Xu1; Zhou, Xiaoyuan1,2
	2019-05-21
摘要	High performance thermoelectric materials are required to possess multi-valley electron transport characteristics. However, this may risk causing strong inter-valley scattering and exponentially decreased carrier mobility with respect to temperature. Herein, taking indium telluride as an example, we reveal that such effects could be effectively suppressed via introducing minute antimony phases (1-2 mol%), which successfully convert the predominant scattering mechanism from inter-valley scattering to acoustic phonon scattering at high temperatures. Finally, with the noticeable improvement in both carrier mobility and power factor, a maximum zT of 0.8 is achieved in the InTe-Sb-0.01 sample at 623 K. The proposed strategy of suppressing inter-valley scattering by nano-precipitates should be one of the possible solutions to such issues.
DOI	10.1039/c9ta00475k
发表期刊	JOURNAL OF MATERIALS CHEMISTRY A
ISSN	2050-7488
卷号	7期号:19页码:11690-11698
收录类别	SCI
WOS记录号	WOS:000472465300005
语种	英语