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Unraveling the Raman Enhancement Mechanism on 1T′-Phase ReS2Nanosheets
Miao, Peng1; Qin, Jing-Kai2; Shen, Yunfeng1; Su, Huimin3; Dai, Junfeng3; Song, Bo4; Du, Yunchen1; Sun, Mengtao5; Zhang, Wei6; Wang, Hsing-Lin3
2018
摘要2D transition metal dichalcogenides materials are explored as potential surface-enhanced Raman spectroscopy substrates. Herein, a systematic study of the Raman enhancement mechanism on distorted 1T (1T′) rhenium disulfide (ReS2) nanosheets is demonstrated. Combined Raman and photoluminescence studies with the introduction of an Al2O3dielectric layer unambiguously reveal that Raman enhancement on ReS2materials is from a charge transfer process rather than from an energy transfer process, and Raman enhancement is inversely proportional while the photoluminescence quenching effect is proportional to the layer number (thickness) of ReS2nanosheets. On monolayer ReS2film, a strong resonance-enhanced Raman scattering effect dependent on the laser excitation energy is detected, and a detection limit as low as 10−9m can be reached from the studied dye molecules such as rhodamine 6G and methylene blue. Such a high enhancement factor achieved through enhanced charge interaction between target molecule and substrate suggests that with careful consideration of the layer-number-dependent feature and excitation-energy-related resonance effect, ReS2is a promising Raman enhancement platform for sensing applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
DOI10.1002/smll.201704079
发表期刊Small
ISSN16136810
卷号14期号:14
收录类别EI
语种英语
EISSN16136829