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	Ga-Doping-Induced Carrier Tuning and Multiphase Engineering in n-type PbTe with Enhanced Thermoelectric Performance
	Wang, Zhengshang1; Wang, Guoyu2,3; Wang, Ruifeng2,3; Zhou, Xiaoyuan4; Chen, Zhiyu1; Yin, Cong1; Tang, Mingjing1; Hu, Qing1; Tang, Jun1; Ang, Ran1,5
	2018
摘要	P-type lead telluride (PbTe) emerged as a promising thermoelectric material for intermediate-temperature waste-heat-energy harvesting. However, n-type PbTe still confronted with a considerable challenge owing to its relatively low figure of merit ZT and conversion efficiency η, limiting widespread thermoelectric applications. Here, we report that Ga-doping in n-type PbTe can optimize carrier concentration and thus improve the power factor. Moreover, further experimental and theoretical evidence reveals that Ga-doping-induced multiphase structures with nano- to micrometer size can simultaneously modulate phonon transport, leading to dramatic reduction of lattice thermal conductivity. As a consequence, a tremendous enhancement of ZT value at 823 K reaches ∼1.3 for n-type Pb0.97Ga0.03Te. In particular, in a wide temperature range from 323 to 823 K, the average ZTavevalue of ∼0.9 and the calculated conversion efficiency η of ∼13% are achieved by Ga doping. The present findings demonstrate the great potential in Ga-doped PbTe thermoelectric materials through a synergetic carrier tuning and multiphase engineering strategy. © Copyright 2018 American Chemical Society.
DOI	10.1021/acsami.8b05117
发表期刊	ACS Applied Materials and Interfaces
ISSN	19448244
卷号	10期号:26页码:22401-22407
收录类别	SCI
语种	英语
EISSN	19448252