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	Facile and Controllable Synthesis of Large-Area Monolayer WS2 Flakes Based on WO3 Precursor Drop-Casted Substrates by Chemical Vapor Deposition
	Shi, Biao1; Zhou, Daming1; Fang, Shaoxi1; Djebbi, Khouloud1,2; Feng, Shuanglong1; Zhao, Hongquan1; Tlili, Chaker1; Wang, Deqiang1,2
	2019-04-01
摘要	Monolayer WS2 (Tungsten Disulfide) with a direct-energy gap and excellent photoluminescence quantum yield at room temperature shows potential applications in optoelectronics. However, controllable synthesis of large-area monolayer WS2 is still challenging because of the difficulty in controlling the interrelated growth parameters. Herein, we report a facile and controllable method for synthesis of large-area monolayer WS2 flakes by direct sulfurization of powdered WO3 (Tungsten Trioxide) drop-casted on SiO2/Si substrates in a one-end sealed quartz tube. The samples were thoroughly characterized by an optical microscope, atomic force microscope, transmission electron microscope, fluorescence microscope, photoluminescence spectrometer, and Raman spectrometer. The obtained results indicate that large triangular monolayer WS2 flakes with an edge length up to 250 to 370 m and homogeneous crystallinity were readily synthesized within 5 min of growth. We demonstrate that the as-grown monolayer WS2 flakes show distinctly size-dependent fluorescence emission, which is mainly attributed to the heterogeneous release of intrinsic tensile strain after growth.
关键词	WS2 2D materials large-area CVD fluorescence emission Raman mapping
DOI	10.3390/nano9040578
发表期刊	NANOMATERIALS
ISSN	2079-4991
卷号	9期号:4页码:12
收录类别	SCI
WOS记录号	WOS:000467768800094
语种	英语