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	Catalyst-free growth of a Zn2GeO4 nanowire network for high-performance transfer-free solar-blind deep UV detection
	Zhao, Yiming1,2; Feng, Shuanglong2; Jiang, Haitao; Ma, Sai2; Tao, Zhiyong1; Lu, Wenqiang2; Fan, Yaxian1
	2019-03-01
摘要	Solar-blind deep-ultraviolet (DUV) photodetectors have attracted wide attention because of their extensive military and civil applications. The ternary oxide Zn2GeO4 is an ideal material with a wide bandgap (E-g = 4.69 eV). In this work, DUV photodetectors based on a ternary Zn2GeO4 nanowire (NW) network were fabricated on SiO2/Si substrates. Reactive ion etching of the SiO2/Si wafer was used to grow the NW network to avoid contamination of the Au catalyst during synthesis of the Zn2GeO4 NW network via high-temperature chemical vapor deposition. Photodetectors based the Zn2GeO4 NW revealed fast response and recovery times, which is attributed to the unique cross-junction barrier-dominated conductance of the NW network. Results showed that the ternary oxide-based NW network is an ideal building block for nanoscale solar-blind photo-detectors with superior performance.
关键词	Zn2GeO4 nanowire Catalyst-free Ultraviolet photodetector
DOI	10.1016/j.physe.2018.11.015
发表期刊	PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
ISSN	1386-9477
卷号	107页码:1-4
收录类别	SCI
WOS记录号	WOS:000454897800001
语种	英语