KMS Chongqing Institute of Green and Intelligent Technology, CAS
| Silicon Oxide Electron-Emitting Nanodiodes | |
Wu, Gongtao1,2; Li, Zhiwei1,2; Tang, Zhigiang1,2; Wei, Dapeng3 ; Zhang, Gengmin1,2; Chen, Qing1,2; Peng, Lion-Mao1,2; Wei, Xianlong1,2
| |
| 2018-08-01 | |
| 摘要 | Electrically driven on-chip electron sources that do not need to be heated are long pursued, but their realization remains challenging. Here, it is shown that a nanogap formed by two electrodes on a silicon oxide substrate functions as an electron-emitting nanodiode after the silicon oxide in the nanogap is electrically switched to a high-resistance conducting state. A nanodiode based on graphene electrodes can be turned on by a voltage of approximate to 7 V in approximate to 100 ns and show an emission current of up to several microamperes, corresponding to an emission density of approximate to 10(6) A cm(-2) and emission efficiency as high as 16.6%. We attribute the electron emission to be generated from a metal-insulator-metal tunneling diode on the substrate surface formed by the rupture of conducting filaments in silicon oxide. An array of 100 nanodiodes exhibits a global emission density of 5 A cm(-2) and stable emission with negligible current degradation over tens of hours under modest vacuum. The combined advantages of a low operating voltage, fast temporal response, high emission density and efficiency, convenient fabrication and integration, and stable emission in modest vacuum make silicon oxide electron-emitting nanodiodes a promising on-chip electron sources. |
| 关键词 | graphene on-chip electron source resistive switching silicon oxide |
| DOI | 10.1002/aelm.201800136 |
| 发表期刊 | ADVANCED ELECTRONIC MATERIALS
 |
| ISSN | 2199-160X |
| 卷号 | 4期号:8页码:6 |
| 收录类别 | SCI |
| WOS记录号 | WOS:000441125200013 |
| 语种 | 英语 |
