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	Complex alloying effect on thermoelectric transport properties of Cu2Ge(Se1-xTex)(3)
	Wang, Ruifeng1,3; Dai, Lu1,3; Yan, Yanci1,2; Peng, Kunling1,2; Lu, Xu2; Zhou, Xiaoyuan2; Wang, Guoyu1,3
	2018-06-01
摘要	To enhance the thermoelectric performance of Cu2GeSe3, a series of Te-alloyed samples Cu2Ge(Se1-xTex)(3) are synthesized and investigated in this work. It is found that the lattice thermal conductivity is reduced drastically for x = 0.1 sample, which may be attributed to the point defects introduced by alloying. However, for samples with x >= 0.2, the lattice thermal conductivity increases with increasing x, which is related to a less distorted structure. The structure evolution, together with the change in carrier concentration, also leads to a systemically change in electrical properties. Finally, a zT of 0.55@750 K is obtained for the sample with x = 0.3, about 62% higher than that for the pristine sample.
关键词	thermoelectric Cu2GeSe3 alloying distorted structure
DOI	10.1088/1674-1056/27/6/067201
发表期刊	CHINESE PHYSICS B
ISSN	1674-1056
卷号	27期号:6页码:6
收录类别	CSCD
WOS记录号	WOS:000435924000001
语种	英语