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	Fabrication of P-type transparent conducting CuxZn1-xS films on glass substrates with high conductivity and optical transparency
	Feng, Menglei1; Zhou, Hongpeng1; Guo, Weimeng1; Zhang, Dingke2; Ye, Lijuan2; Li, Wanjun2; Ma, Jiangang3,4; Wang, Guoyu5; Chen, Shijian1
	2018-06-25
摘要	Fabrication of p-type transparent conducting films on cheap substrate is highly desirable for the commercial applications. In this work, conductive and transparent p-type CuxZn1-xS films were successfully grown on glass substrate by pulsed laser deposition (PLD) method following by in situ annealing treatment. The experimental results indicate post-annealing treatment significantly improves the crystallinity of the films and correspondingly enhances the conductivity and optical transparency performance. Through systematical adjusting the growth parameters, the Cu0.35Zn0.65S films grown at T - 600 degrees C (in situ annealing for 0.5 h) possess excellent performance with conductivity sigma - 261.1 S cm(-1) at room temperature and average optical transmittance T = 58% in the visible region. Theoretical investigation shows that the Cu+ ions doping makes the primary contribution to valence band edges without creating defective bands in forbidden gap of ZnS, which is essential for p-type transparent conducting films. This work demonstrates the possibility of preparing p-type TCMs with relatively high conductivity and optical transparency on cheap glass substrates, which may be used for the development of "invisible electronics". (C) 2018 Elsevier B.V. All rights reserved.
关键词	CuxZn1-xS films P-type Transparent Glass substrates High conductivity
DOI	10.1016/j.jallcom.2018.03.402
发表期刊	JOURNAL OF ALLOYS AND COMPOUNDS
ISSN	0925-8388
卷号	750页码:750-756
收录类别	SCI
WOS记录号	WOS:000432668500090
语种	英语