KMS Chongqing Institute of Green and Intelligent Technology, CAS
| Microscopic study of thermoelectric In-doped SnTe | |
Nan,Pengfei1,2; Liu,Ruibin1; Chang,Yunjie2; Wu,Hongbo1; Wang,Yumei2; Yu,Richeng2; Shen,Jun3 ; Guo,Wei1; Ge,Binghui2
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| 2018-04-27 | |
| 摘要 | Abstract SnTe is a p-type thermoelectric material that is isostructural with PbTe, for which it is a potential environmentally friendly replacement. By doping the SnTe lattice with In, the thermal conductivity of SnTe can be significantly reduced and the thermoelectric conversion efficiency improved. A large number of precipitates were present in the In-doped SnTe samples; based on atomic-resolution high-angle annular dark-field images and electron energy loss spectra, these precipitates were identified as the zinc-blende phase of In2Te3. Through geometry phase analysis, a new phonon scattering mechanism is discussed. |
| 关键词 | inversion domain SnTe HAADF geometry phase analysis |
| DOI | 10.1088/1361-6528/aabb0f |
| 发表期刊 | Nanotechnology
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| ISSN | 0957-4484 |
| 卷号 | 29期号:26 |
| WOS记录号 | IOP:0957-4484-29-26-aabb0f |
| 语种 | 英语 |
