KMS Chongqing Institute of Green and Intelligent Technology, CAS
| High-performance solar-blind photodetector with graphene and nitrogen-doped reduced graphene oxide quantum dots (rGOQDs) | |
Zhang, Enliang1,2; Sun, Tai2 ; Ge, Bangtong2; Zhang, Weiguo2; Gao, Xuan2; Jiang, Hao2; Li, Zhancheng2; Liu, Guojun1; Shen, Jun2
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| 2018-02-01 | |
| 摘要 | Hybrid photodetector of graphene and reduced graphene oxide quantum dots (rGOQDs) is promising for deep-UV photodetection. However, these photodetectors are usually suffered from long response time and vacuum-required measurement environment. In this study, nitrogen-doped rGOQDs were synthesized by the improved Hummers method and DMF hydrothermal treatment approach, while DMF was used as a reducing reagent to enhance the photoresponse of rGOQDs. Hybrid photodetector with rGOQDs on graphene was fabricated using Al2O3, as capping layer. High photoresponsivity of 2.1 x 10(6) V/W and response time of 0.13 s were obtained at deep-UV under ambient environment, and enhanced photoresponse was observed in solar-blind wavelength compared to normal UV light. Furthermore, the integration of rGOQDs made a great improvement for graphene transistor characteristics, with a 5-fold mobility improvement and a shift of Dirac point of 50 V. This paper provide a feasible way for the fabrication of solar-blind photodetectors with high responsivity, fast response time and ambient condition performance, which are important for the community of photodetection. |
| 关键词 | rGOQDs Graphene Photodetector UV Capping Layer |
| DOI | 10.1166/mex.2018.1410 |
| 发表期刊 | MATERIALS EXPRESS
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| ISSN | 2158-5849 |
| 卷号 | 8期号:1页码:105-111 |
| 收录类别 | SCI |
| WOS记录号 | WOS:000428765000010 |
| 语种 | 英语 |
