中国科学院重庆绿色智能技术研究院机构知识库

QQ客服 官方微博 反馈留言

	Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition
	Liu, Donghua1,2; Chen, Xiaosong1,2; Hu, Yibin3,4; Sun, Tai5; Song, Zhibo6; Zheng, Yujie6; Cao, Yongbin1,2; Cai, Zhi1,2; Cao, Min1,2; Peng, Lan1,2
	2018-01-15
摘要	Graphene is regarded as a potential surface-enhanced Raman spectroscopy (SERS) substrate. However, the application of graphene quantum dots (GQDs) has had limited success due to material quality. Here, we develop a quasi-equilibrium plasma-enhanced chemical vapor deposition method to produce high-quality ultra-clean GQDs with sizes down to 2 nm directly on SiO2/Si, which are used as SERS substrates. The enhancement factor, which depends on the GQD size, is higher than conventional graphene sheets with sensitivity down to 1 x 10(-9) mol L-1 rhodamine. This is attributed to the high-quality GQDs with atomically clean surfaces and large number of edges, as well as the enhanced charge transfer between molecules and GQDs with appropriate diameters due to the existence of Van Hove singularities in the electronic density of states. This work demonstrates a sensitive SERS substrate, and is valuable for applications of GQDs in graphene-based photonics and optoelectronics.
DOI	10.1038/s41467-017-02627-5
发表期刊	NATURE COMMUNICATIONS
ISSN	2041-1723
卷号	9页码:10
收录类别	SCI
WOS记录号	WOS:000422646500008
语种	英语