KMS Chongqing Institute of Green and Intelligent Technology, CAS
Two impurity energy level regulation leads to enhanced thermoelectric performance of Ag1-xCdxIn5Se8 | |
Shen, Xingchen1; Shaheen, Nusrat1; Zhang, Aijuan1; Yang, Dingfeng1; Yao, Wei1; Wang, Guoyu2; Lu, Xu1; Zhou, Xiaoyuan1 | |
2017 | |
摘要 | The tetrahedrally bonded diamond-like compound AgIn5Se8 is proved to be a promising thermoelectric material due to its intrinsically low thermal conductivity. For the pristine AgIn5Se8 compound, however, the inferior electrical properties generally result in a limited zT value, owing to its wide band gap, up to 1.1 eV. Here, we report on the synthesis of AgIn5Se8 compound through a quick and convenient solid-state reaction route. Furthermore, the two impurity energy levels are regulated in those doped samples by incorporating Cd2+ ions at Ag+ lattice sites; the electron concentration dramatically increases, resulting in greatly enhanced electrical conductivity and thus a thermoelectric power factor over the entire temperature range. Combined with the intrinsically low lattice thermal conductivity, Cd-doped Ag1-xCdxIn5Se8 with x = 0.05 reaches the highest zT value of 0.63 at 883 K, favorably improved by 40% compared with that of the pristine AgIn5Se8. |
DOI | 10.1039/c6ra28432a |
URL | 查看原文 |
发表期刊 | RSC ADVANCES |
ISSN | 2046-2069 |
卷号 | 7期号:21页码:12719-12725 |
通讯作者 | Lu, X ; Zhou, XY (reprint author), Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China. |
收录类别 | SCI |
WOS记录号 | WOS:000395934500034 |
语种 | 英语 |