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Highly responsive and broadband photodetectors based on WS2-graphene van der Waals epitaxial heterostructures
Lan, Changyong1,2; Li, Chun1,2; Wang, Shuai1,2; He, Tianying1,2; Zhou, Zhifei1,2; Wei, Dapeng3; Guo, Huayang1,2; Yang, Hao4; Liu, Yong1,2
2017
摘要van der Waals heterostructures built from two-dimensional (2D) materials have attracted wide attention because of their fascinating electrical and optoelectronic properties. Here, we report a highly responsive and broadband photodetector based on WS2-graphene van der Waals epitaxial heterostructures, which were fabricated by directly growing single crystalline few layer WS2 nanosheets on a polycrystalline graphene film. Upon light illumination, the current apparently reduces because of the transfer of photogenerated electrons from WS2 into the underlying p-type graphene and a photo-gating effect induced by the remaining holes, which is in stark contrast to ordinary semiconducting photoconductors. Thanks to the strong and broadband absorption of WS2, the WS2-graphene heterostructure photodetector exhibits a high responsivity with a maximum of 950 A W-1 at 405 nm and a wide spectrum response ranging from 340 to 680 nm. The high performance can be attributed to the internal built-in electric field at the WS2-graphene interface, which leads to the efficient separation of photogenerated electron-hole pairs. The WS2-graphene heterostructure photodetector may have potential applications in low cost, broadband, and flexible optoelectronics.
DOI10.1039/c6tc05037a
发表期刊JOURNAL OF MATERIALS CHEMISTRY C
ISSN2050-7526
卷号5期号:6页码:1494-1500
通讯作者Li, C (reprint author), Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China. ; Li, C (reprint author), Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China.
收录类别SCI
WOS记录号WOS:000395888900025
语种英语