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Direct Preparation of Carbon Nanotube Intramolecular Junctions on Structured Substrates
An, Jianing1; Zhan, Zhaoyao2; Sun, Gengzhi3,4; Mohan, Hari Krishna Salila Vijayalal1; Zhou, Jinyuan5; Kim, Young-Jin1; Zheng, Lianxi6
2016-12-01
摘要Leveraging the unique properties of single-walled carbon nanotube (SWNT) intramolecular junctions (IMJs) in innovative nanodevices and next-generation nanoelectronics requires controllable, repeatable, and large-scale preparation, together with rapid identification and comprehensive characterization of such structures. Here we demonstrate SWNT IMJs through directly growing ultralong SWNTs on trenched substrates. It is found that the trench configurations introduce axial strain in partially suspended nanotubes, and promote bending deformation in the vicinity of the trench edges. As a result, the lattice and electronic structure of the nanotubes can be locally modified, to form IMJs in the deformation regions. The trench patterns also enable pre-defining the formation locations of SWNT IMJs, facilitating the rapid identification. Elaborate Raman characterization has verified the formation of SWNT IMJs and identified their types. Rectifying behavior has been observed by electrical measurements on the as-prepared semiconducting-semiconducting (S-S) junction.
DOI10.1038/srep38032
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发表期刊SCIENTIFIC REPORTS
ISSN2045-2322
卷号6页码:9
通讯作者Kim, YJ (reprint author), Nanyang Technol Univ, Sch Mech & Aerosp Engn, 50 Nanyang Ave, Singapore 639798, Singapore. ; Zheng, LX (reprint author), Khalifa Univ Sci Technol & Res, Dept Mech Engn, Abu Dhabi 127788, U Arab Emirates.
收录类别SCI
WOS记录号WOS:000390018100001
语种英语