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	Controllable Synthesis of Graphene by Plasma-Enhanced Chemical Vapor Deposition and Its Related Applications
	Li, Menglin1; Liu, Donghua1; Wei, Dacheng1; Song, Xuefen2; Wei, Dapeng2; Wee, Andrew Thye Shen3
	2016-11-01
摘要	Graphene and its derivatives hold a great promise for widespread applications such as field-effect transistors, photovoltaic devices, supercapacitors, and sensors due to excellent properties as well as its atomically thin, transparent, and flexible structure. In order to realize the practical applications, graphene needs to be synthesized in a low-cost, scalable, and controllable manner. Plasma-enhanced chemical vapor deposition (PECVD) is a low-temperature, controllable, and catalyst-free synthesis method suitable for graphene growth and has recently received more attentions. This review summarizes recent advances in the PECVD growth of graphene on different substrates, discusses the growth mechanism and its related applications. Furthermore, the challenges and future development in this field are also discussed.
DOI	10.1002/advs.201600003
URL	查看原文
发表期刊	ADVANCED SCIENCE
ISSN	2198-3844
卷号	3期号:11页码:23
通讯作者	Wei, DC (reprint author), Fudan Univ, Dept Macromol Sci, State Key Lab Mol Engn Polymers, Shanghai 200433, Peoples R China.
收录类别	SCI
WOS记录号	WOS:000387649100002
语种	英语