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Rapid synthesis of transition metal dichalcogenide few-layer thin crystals by the microwave-induced-plasma assisted method
Chaturvedi, Apoorva1; Slabon, Adam2; Hu, Peng1; Feng, Shuanglong3; Zhang, Ke-ke1; Prabhakar, Rajiv Ramanujam1; Kloc, Christian1
2016-09-15
摘要

Few-layer thin crystals of WS2, MoS2, WSe2, MoSe2 and ReS2 were synthesized via the microwave induced-plasma-assisted method. The synthesis was accomplished in plasma that was formed inside sealed quartz ampoules heated by plasma surrounding the sealed ampoule. Powder X-ray diffraction, Raman spectroscopy and Transmission Electron Microscopy indicate thin crystals of high-quality. The proposed method is rapid, reproducible and environmentally friendly. It is applicable to practically every direct reaction between metals and nonmetals if the nonmetal vapor pressure can reach a pressure of a few torr, which is required for plasma formation inside a sealed ampoule. (C) 2016 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (hap://creativecommons.orgilicerises/by/4.0/).

关键词Plasma Synthesis Nanomaterials Semiconducting Materials Transition Metal Dichalcogenides
DOI10.1016/j.jcrysgro.2016.06.009
发表期刊JOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
卷号450页码:140-147
收录类别SCI
WOS记录号WOS:000382256900019
语种英语