KMS Chongqing Institute of Green and Intelligent Technology, CAS
Rapid synthesis of transition metal dichalcogenide few-layer thin crystals by the microwave-induced-plasma assisted method | |
Chaturvedi, Apoorva1; Slabon, Adam2; Hu, Peng1; Feng, Shuanglong3; Zhang, Ke-ke1; Prabhakar, Rajiv Ramanujam1; Kloc, Christian1 | |
2016-09-15 | |
摘要 | Few-layer thin crystals of WS2, MoS2, WSe2, MoSe2 and ReS2 were synthesized via the microwave induced-plasma-assisted method. The synthesis was accomplished in plasma that was formed inside sealed quartz ampoules heated by plasma surrounding the sealed ampoule. Powder X-ray diffraction, Raman spectroscopy and Transmission Electron Microscopy indicate thin crystals of high-quality. The proposed method is rapid, reproducible and environmentally friendly. It is applicable to practically every direct reaction between metals and nonmetals if the nonmetal vapor pressure can reach a pressure of a few torr, which is required for plasma formation inside a sealed ampoule. (C) 2016 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (hap://creativecommons.orgilicerises/by/4.0/). |
关键词 | Plasma Synthesis Nanomaterials Semiconducting Materials Transition Metal Dichalcogenides |
DOI | 10.1016/j.jcrysgro.2016.06.009 |
发表期刊 | JOURNAL OF CRYSTAL GROWTH |
ISSN | 0022-0248 |
卷号 | 450页码:140-147 |
收录类别 | SCI |
WOS记录号 | WOS:000382256900019 |
语种 | 英语 |