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	Single-mode-resonance interference in photoresist sub-micron waveguide for high exposure depth nanolithography
	Yang, Zheng1,2; Zhang, Zhiyou3; Wu, Peng1,2; Xia, Liangping1,2; Yin, Shaoyun1,2; Du, Jinglei3
	2016-03-25
摘要	A high exposure depth nanolithography technology is presented. In the proposed scheme, the photoresist layer is used as a waveguide. With a subwavelength grating (SWG) coupling structure, the incident light is efficiently coupled into the photoresist waveguide, in which the single-mode-resonance (SMR) interference field is formed. Different from other interference lithography, the new scheme can realize high resolution and high exposure depth simultaneously. In this paper, the theoretical model of the SMR interference is established to analyze the light field distribution in the photoresist The simulation result shows that interference pattern with period smaller than 140 nm and depth larger than 900 nm can be obtained in the photoresist, by using 441 nm incident light and 276 nm period grating coupling structure. (c) 2016 Elsevier B.V. All rights reserved.
关键词	Lithography Subwavelength Nanostructure fabrication Waveguide Single-mode-resonance
DOI	10.1016/j.mee.2016.01.004
发表期刊	MICROELECTRONIC ENGINEERING
ISSN	0167-9317
卷号	154页码:8-11
通讯作者	Yang, Z (reprint author), Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing, Peoples R China. ; Yang, Z (reprint author), Chongqing Key Lab Multiscale Mfg Technol, Chongqing, Peoples R China.
收录类别	SCI
WOS记录号	WOS:000378363400002
语种	英语