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Effect of Sn Doping in (Bi0.25Sb0.75)(2-x)SnxTe3 (0 <= x <= 0.1) on Thermoelectric Performance
Cai, Zhengwei1; Guo, Lijie1; Xu, Xiaolong1; Yan, Yanci1; Peng, Kunling1; Wang, Guiwen1,2; Wang, Guoyu2; Zhou, Xiaoyuan1
2016-03-01
摘要We report the effect of Sn doping on the thermoelectric performance of (Bi0.25Sb0.75)(2)SnxTe3 compounds (x = 0, 0.005, 0.01, 0.05, 0.1, 0.2) synthesized by the melting method followed by high-energy ball milling and spark plasma sintering. As indicated by transmission electron microscopy and scanning electron microscopy images, layered structure and inhomogeneous nanostructures are present in (Bi0.25Sb0.75)(2-x)SnxTe3. It is found that Sn doping dramatically reduces the thermal conductivity together with a minor decline in the electrical conductivity, yielding a net enhancement of the figure of merit (ZT). The highest ZT value is approximately 1.03 at 338 K when x is 0.01, an increase of 28.4% compared with the pure sample.
关键词(Bi0.25Sb0.75)(2-x) SnxTe3 thermoelectric properties Sn doping layered structure
DOI10.1007/S11664-015-4061-5
发表期刊JOURNAL OF ELECTRONIC MATERIALS
ISSN0361-5235
卷号45期号:3页码:1441-1446
通讯作者Zhou, XY (reprint author), Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China. ; Wang, GY (reprint author), Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China.
收录类别SCI
WOS记录号WOS:000371163400035
语种英语