KMS Chongqing Institute of Green and Intelligent Technology, CAS
| Layer-independent and layer-dependent nonlinear optical properties of two-dimensional GaX (X = S, Se, Te) nanosheets | |
Hu, Lei1,2; Huang, Xuri1 ; Wei, Dongshan2
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| 2017-05-14 | |
| 摘要 | Recently researchers have found that the non-resonant second-harmonic generation (SHG) intensity of the GaSe monolayer (ML) is the strongest among all two-dimensional (2D) atomic layered crystals. Here we perform a systematic first-principles study of the SHG coefficient of GaX (X = S, Se, Te) monolayers (MLs) and few-layers. We find that the non-resonant SHG intensity of the GaS ML can be comparable with that of the GaSe ML, while the non-resonant SHG intensity of the GaTe ML is much stronger than that of the GaSe ML. Furthermore, the magnitudes of SHG coefficients of the few-layers exfoliated from bulk epsilon-GaSe and newly constructed N-1-GaSe crystals are very close to that of the GaSe ML, showing no dependence on the layer number. The magnitude of the SHG coefficient of the trilayer exfoliated from the bulk beta-GaSe crystals is around 1/3 of that of the GaSe ML, decreasing rapidly with the layer number. This study indicates that a strong SHG response can be obtained in a wide range of monolayers and few-layers. Moreover, we point out that one can identify the layer number and the stacking sequence of 2D nanosheets by measuring their elastic constants and SHG coefficients. |
| DOI | 10.1039/c7cp00578d |
| 发表期刊 | PHYSICAL CHEMISTRY CHEMICAL PHYSICS
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| ISSN | 1463-9076 |
| 卷号 | 19期号:18页码:11131-11141 |
| 通讯作者 | Huang, XR (reprint author), Jilin Univ, Int Joint Res Lab Nanomicro Architecture Chem, Inst Theoret Chem, Changchun 130023, Peoples R China. ; Wei, DS (reprint author), Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China. |
| 收录类别 | SCI |
| WOS记录号 | WOS:000401022300017 |
| 语种 | 英语 |
