KMS Chongqing Institute of Green and Intelligent Technology, CAS
| Broad temperature plateau for high ZTs in heavily doped p-type SnSe single crystals | |
Peng, Kunling1,2; Lu, Xu1; Zhan, Heng1; Hui, Si3; Tang, Xiaodan1,2; Wang, Guiwen1,2; Dai, Jiyan4; Uher, Ctirad3; Wang, Guoyu2  ; Zhou, Xiaoyuan1
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| 2016 | |
| 摘要 | Excellent thermoelectric performance is obtained over a broad temperature range from 300 K to 800 K by doping single crystals of SnSe. The average value of the figure of merit ZT, of more than 1.17, is measured from 300 K to 800 K along the crystallographic b-axis of 3 at% Na-doped SnSe, with the maximum ZT reaching a value of 2 at 800 K. The room temperature value of the power factor for the same sample and in the same direction is 2.8 mW mK(-2), which is an order of magnitude higher than that of the undoped crystal. Calculations show that Na doping lowers the Fermi level and increases the number of carrier pockets in SnSe, leading to a collaborative optimization of the Seebeck coefficient and the electrical conductivity. The resultant optimized carrier concentration and the increased number of carrier pockets near the Fermi level in Na-doped samples are believed to be the key factors behind the spectacular enhancement of the average ZT. |
| DOI | 10.1039/c5ee03366g |
| 发表期刊 | ENERGY & ENVIRONMENTAL SCIENCE
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| ISSN | 1754-5692 |
| 卷号 | 9期号:2页码:454-460 |
| 通讯作者 | Zhou, XY (reprint author), Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China. ; Wang, GY (reprint author), Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China. |
| 收录类别 | SCI |
| WOS记录号 | WOS:000369744500009 |
| 语种 | 英语 |
