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	Composite Transparent Electrode of Graphene Nanowalls and Silver Nanowires on Micropyramidal Si for High-Efficiency Schottky Junction Solar Cells
	Jiao, Tianpeng1,2; Liu, Jian1,3,4; Wei, Dapeng1; Feng, Yanhui2; Song, Xuefen1; Shi, Haofei1; Jia, Shuming1; Sun, Wentao3; Dut, Chunlei1
	2015-09-16
摘要	The conventional graphene-silicon Schottky junction solar cell inevitably involves the graphene growth and transfer process, which results in complicated technology, loss of quality of the graphene, extra cost, and environmental unfriendliness. Moreover, the conventional transfer method is not well suited to conformationally coat graphene on a three-dimensional (3D) silicon surface. Thus, worse interfacial conditions are inevitable. In this work, we directly grow graphene nanowalls (GNWs) onto the micropyramidal silicon (MP) by the plasma-enhanced chemical vapor deposition method. By controlling growth time, the cell exhibits optimal pristine photovoltaic performance of 3.8%. Furthermore, we improve the conductivity of the GMAT electrode by introducing the silver nanowire (AgNW) network, which could achieve lower sheet resistance. An efficiency of 6.6% has been obtained for the AgNWs-GNWs-MP solar cell without any chemical doping. Meanwhile, the cell exhibits excellent stability exposed to air. Our studies show a promising way to develop simple-technology, low-cost, high-efficiency, and stable Schottky junction solar cells.
关键词	one-step growth graphene nanowalls three-dimensional Si solar cells silver nanowires composite electrode high efficiency stability
DOI	10.1021/acsami.5b05565
发表期刊	ACS APPLIED MATERIALS & INTERFACES
ISSN	1944-8244
卷号	7期号:36页码:20179-20183
通讯作者	Wei, DP (reprint author), Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China.
收录类别	SCI
WOS记录号	WOS:000361501700037
语种	英语