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Phosphonate Diacid Molecule Induced Crystallization Manipulation and Defect Passivation for High-Performance Inverted MA-Free Perovskite Solar Cells
Wang, Ke1; Xu, Zhiyuan1; Guo, Zhihao1; Wang, Huaxin1; Qaid, Saif M. H.2; Yang, Ke3; Zang, Zhigang1,4
2024-06-18
摘要Inverted perovskite solar cells (PSCs) comprising formamidinium-cesium (FA-Cs) lead triiodide have garnered considerable attention due to their impressive efficiency and remarkable stability. Nevertheless, synthesizing high-quality FA-Cs alloyed perovskite films presents challenges, primarily attributable to the intricate interphase process involved and the absence of methylammonium (MA+) and mixed halogens. Here, the additive 3-phosphonopropanoic acid (3-PPA) is introduced, with bifunctional phosphonic acid groups, into the perovskite precursor to modulate the crystal growth and provide passivation at grain boundaries. In situ characterization reveals that the 3-PPA can form a "rapid nucleation, slow growth" mechanism, resulting in perovskite films with enlarged grains and enhanced crystallinity. In addition, 3-PPA serves to passivate grain boundary defects and release residual strain by forming molecular bridging, leading to the passivated films achieving a fluorescence lifetime of 5.79 microseconds with a favorable n-type contact interface. As a result, the resulting devices incorporating 3-PPA achieve a champion power conversion efficiency (PCE) of 24.05% and an ultra-high fill factor (FF) of 84.22%. More importantly, the optimized devices exhibit satisfactory stability under various testing conditions. The findings underscore the pivotal role of multifunctional additives in crystallization control and defect passivation for high-performance MA-free and pure iodine PSCs. A facile strategy is reported to systematically manipulate the crystallization and passivate defects by incorporating robust dual-functional additives. The additive not only regulates crystallization kinetics but acts as a passivator, effectively passivating defects, releasing residual strain, and achieving a favorable n-type contact interface. The resultant devices accomplish a power conversion efficiency (PCE) of 24.05% and an ultra-high fill factor (FF) of 84.22% with improved stability. image
关键词crystallization manipulation defect passivation inverted perovskite solar cells stress release
DOI10.1002/aenm.202402249
发表期刊ADVANCED ENERGY MATERIALS
ISSN1614-6832
页码12
通讯作者Zang, Zhigang(zangzg@cqu.edu.cn)
收录类别SCI
WOS记录号WOS:001250253900001
语种英语